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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3223 DESCRIPTION *With TO-3 package *High speed,high current *Low saturation voltage APPLICATIONS *For high current high speed,high power applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 230 230 7 20 7 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.62 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A At rated voltage At rated voltage At rated voltage IC=20A ; VCE=2V IC=2A ; VCE=10V 10 MIN 230 2SC3223 TYP. MAX UNIT V 1.0 1.5 0.1 0.1 0.1 V V mA mA mA 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3223 Fig.2 Outline dimensions 3 |
Price & Availability of 2SC3223 |
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